会议名称(中文): 2014年SPIE碳纳米管,石墨烯,以及相关设备会议 会议名称(英文): Carbon Nanotubes, Graphene, and Associated Devices VII 所属学科: 纳米科学与技术,仪器仪表与装置 开始日期: 2014-08-17 结束日期: 2014-08-21 所在国家: 美国 所在城市: 美国 具体地点: San Diego, California, United States 主办单位: 国际光学和光子学学会
[ 会务组联系方式 ] 联系电话: +1 360 685 5600 E-MAIL: saral@spie.org 会议网站: http://spie.org/OPN/conferencedetails/carbon-nanotubes-graphene 会议背景介绍: As the scaling down of silicon-based devices is reaching physical and technological limits, other materials are actively being studied in order to keep the miniaturisation pace. Among these, single walled carbon nanotubes (SWNTs) and more recently graphene, have attracted a huge attention.
SWNTs are one-dimensional molecular structures that can be synthesised routinely with diameters in the nanometer range. They exhibit unique electronic properties that make them highly promising for device fabrication beyond the CMOS era. Exceptional SWNT-based field-effect transistor (FET) characteristics have already been published, that outperform by far those of state-of-the-art Si MOSFETs. Optoelectronic devices (LEDs and photodetectors) have also been demonstrated. However, major problems are slowing down the development of nanotube electronics and optoelectronics, such as the non-uniformity of the SWNT material after synthesis (mixtures of metallic and semiconductor specimens are invariably obtained), the difficulty of making ohmic contacts (particularly to SWNTs with diameters of 1nm or below which are technologically relevant) and above all the formidable challenge of organising SWNTs in dense arrays, compatible with modern ULSI device densities. Actually, in order to circumvent the organisation problem, materials and device scientists are more and more using nanotube mats (2D random networks) for device fabrication, with of course degraded characteristics. Such devices can be used for chemical or biological applications. On the other hand, multi walled carbon nanotubes (MWNTs) have extensively been studied for field emission applications over the past few years, and field-emitted current values around 100 ?A/tube are now routinely reached in cold cathodes. Also, electron emission can be modulated at microwave frequencies, which opens up new prospects for electron tubes.
Recently, graphene (an unrolled, flat carbon nanotube) and few-layer graphene materials have appeared and are thoroughly studied for transistor (in the form of narrow ribbons or bilayer material) and conductive thin film applications. The discovery of graphene in 2004 has been rewarded by the 2010 Nobel Prize in Physics. One of the interests of graphene, a zero gap semiconductor, is the fact that carriers exhibit very high mobilities, even at room temperature. Moreover, graphene can be processed and "carved" using the well know paradigm and tools developed by the semiconductor industry, which is a huge advantage over CNTs. The creation of a forbidden gap in graphene is an active field of research.
The purpose of the conference is to provide a broad overview of the state-of-the-art and perspectives of carbon nanotubes, and graphene as well as few layers graphene films, bringing together experts from different communities: materials science and chemistry as well as biology, device physics, nanofabrication and nanoorganisation, industrial developments, etc. 征文范围及要求: Contributions for this conference are encouraged in the following areas: graphene and few layers graphene films band gap creation in graphene synthesis of carbon nanotubes synthesis of graphene and few layers graphene films characterization at different length scales CNT and graphene-based devices separation methods for CNTs device physics device engineering optoelectronic devices novel devices including sensors random networks and methods for their deposition large-area graphene films CNT organisation and high density packing field emission from CNTs chemical and biological sensors (CNT and graphene) CNT interactions with liquid crystals CNT-graphene hybrid nanostructures optical metrology of carbon nanomaterials. |