陈志忠 副教授
教育背景：南京大学博士（2000年）
研究方向：宽禁带半导体（凝聚态物理与材料物理研究所）
个人简介
陈志忠，男，42岁，理学博士，北京大学物理学院，副教授。主要研究方向III族氮化物器件物理，包含GaN基垂直结构 LED；GaN基微纳米出光结构；GaN基微纳米器件；调节生物节律的LED光源等等。近年来，作为负责人多次承担国家 863，973和自然科学基金课题。在激光剥离，垂直结构LED，微纳出光结构及微米LED方面均取得了较大的成绩，共发表 SCI论文90余篇，申请专利30余项，获得北京市科技进步奖等奖项3项。
教育经历
1991-1995年，南京大学，物理系，大学/本科，张荣
1995-2000年，南京大学，物理系，研究生/博士，郑有炓
工作经历
2000-2002年，北京大学，凝聚态物理博士后流动站，博士后
2001-2002年，上海蓝光科技有限公司，LED芯片部，高级工程师
2002-2004年，北京大学，物理学院凝聚态物理研究所，讲师
2004至今，北京大学，物理学院凝聚态物理研究所，副教授
2005年2月，比利时鲁汶大学，高能粒子研究所，短期访问学者
2009年8月-2010年8月，英国Strathclyde大学，光电子研究所，访问学者
科研成果
近三年共发表与本项目相关论文35篇,其中SCI论文21篇,第一作者或通讯作者论文13篇（作者*）
1.Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED
Shuang Jiang, Zhe Hu, Zhizhong Chen,* Xingxing Fu, Xianzhe Jiang, Qianqian Jiao, Tongjun Yu, and Guoyi Zhang, OPTICS EXPRESS, Vol. 21, No. 10, 12100( 2013)
2.GaN based substrates and optoelectronic materials and devices
ZHANG GuoYi1,2, SHEN Bo1,2, CHEN ZhiZhong1,2*, HU XiaoDong1,2, QIN ZhiXin1,2, WANG XinQiang1,2, WU JieJun1,2, YU TongJun1,2, KANG XiangNing1,2, FU XingXing1,2, YANG Wei1,2, YANG ZhiJian1,2 & GAN ZhiZhao1,2 Chinese Science Bulletin（2013，已接受）
3.Quasi- homoepitaxial GaN-based blue light emitting diode on thick GaN template
J.Z.Li, Y.B.Tao, Z.Z.Chen*, X.Z.Jiang, X.X.Fu, S.Jiang, Q.Q.Jiao, T.J.Yu and G.Y.Zhang. Chinese Physics B，（2013，已接受）
4.Morphology evolution of MOCVD grown GaN epitaxial layers on nanoPSS
Xianzhe Jiang, Zhizhong Chen*, Junze Li, Shuang Jiang, Xiangning Kang, and Guoyi Zhang. Physica Status Solidi, (2013, be accepted)
5.Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on NanoPSS
Xianzhe Jiang, Zhizhong Chen*, Junze Li, Shuang Jiang, Xiangning Kang and Guoyi Zhang. 10th International Conference on Nitride Semiconductors (ICNS-10)， AP2.17(2013)
6.Fabrication Characterization and Comparison of GaN Nanorods by both Selective Area MOVPE Growth and Etching
Shunfeng Li,*, Qianqian Jiao, Zhizhong Chen, Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang 10th International Conference on Nitride Semiconductors (ICNS-10)， BP2.19(2013)
7.Crystal Quality Improvement of GaN Coalesced Using Nano-PSS with Void-Embedded Nanostructure by MOVPE
JunZe Lee, Zhizhong Chen, Xianzhe Jiang, Zhe Hu, Xiangning Kang, and GuoYi Zhang; 10th International Conference on Nitride Semiconductors (ICNS-10)， AP3.10(2013)
8.Emission enhancement of green LED through coupling with localized surface plasmon in Ag hexagonal arrays by nanoimprint
S. Jiang, Z.Z. Chen*, Z. Hu, X.X. Fu, X. Z. Jiang, Q.Q. Jiao, J. Z. Li, T.J. Yu, Y. Gu, G.Y. Zhang. APWS-2013, (oral, Taiwan, China）
9.Wafer-scale Photonic Crystals fabrication on GaN-based LED Using Nanoimprint Lithography with Anodic Aluminum Oxide Template
Xianzhe Jiang , Xingxing Fu, Zhizhong Chen*, Bei Zhang, Xiangning Kang, Shuang Jiang, Tongjun Yu, and Guoyi Zhang. APWS-2013, (oral, Taiwan, China）
10.The remarkable performances of GaN based blue micron-scale LED with the reduction of Size
Q.Q.Jiao, S.Y.Wang, ZZ.Chen*, Y.B.Tao, S.Jiang, X.X.Fu, X.Z.Jiang,T.J.Yu, J.J.Wu,G.Y.Zhang. APWS-2013, (oral, Taiwan, China)
11.Modeling of InGaN/GaN MQWs LED with wells sandwiched by symmetrical thin low indium-InGaN layers
Junze Li, Zhizhong Chen*, Xianzhe Jiang, Zhe Hu, Xiangning Kang and Guoyi Zhang. APWS-2013, (oral, Taiwan, China）
12.Patterned Growth of GaN Rods and Core-shell LED Structure by MOVPE
Shunfeng Li, Zhizhong Chen, Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang. APWS-2013, (oral, Taiwan, China）
13.Size effect on radiative recombination of nanorod light emitting diode by focused ion beam etching
Zhizhong Chen, Shunfeng Li, Qianqian Jiao, Shuang Jiang, Xianzhe Jiang, Junze Li and Guoyi Zhang. Sino-German symposium of Nano-X Fundmental instruments and research on Novel Nanodevices (Suzhou, oral, 2013)
14.Fabrication and Characterization of GaN nanorods and nano LED by top-down and bottom-up
Shunfeng Li,, Zhizhong Chen , Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang. Sino-German symposium of Nano-X Fundmental instruments and research on Novel Nanodevices (Suzhou, oral, 2013)
15.Wafer-scale photonic crystals fabrication using anodic alumina oxide template and nanoimprint lithography
X. X. Fu, Z. Z. Chen*, B. Zhang, X. Z. Jiang, C. Y. Jia, S. Jiang, D. Li, X. N. Kang, T. J. Yu, and G. Y. Zhang. IWN-2012, Oct. Japan, (oral)
16.Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaN
Feng Yu, Zhizhong Chen, Shengli Qi,Suyuan Wang, Shuang Jiang, Xingxing Fu, Xianzhe Jiang,Tongjun Yu, Zhixin Qin, Xiangning Kang, Jiejun Wu and Guoyi Zhang. Cryst. Eng. Comm.,14， 4781（2012）
17.Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
Pengfei Tian, Erdan Gu, Zhizhong Chen et al. Appl. Phys. Lett. 101, 231110 (2012)
18.Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging
E. Y. Xie, Z. Z. Chen, P. R. Edwards, Z. Gong, N. Y. Liu et al. J. Appl. Phys. 112, 013107 (2012);
19.Size effect on efficiency droop of blue light emitting diode*
Y.B.Tao, S.Y.Wang, Z.Z.Chen*, Phys. Status Solidi C 9, No. 3–4, 616–619 (2012)
20.Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN *
Junjing Deng, Zhizhong Chen*, Suyuan Wang, Feng Yu, Tongjun Yu, Guoyi Zhang. Phys. Status Solidi C 9, No. 3–4, 527–529 (2012)
21.GaN基微米LED优异特性的机制研究
王溯源，陶岳彬，陈志忠，张国义. 半导体光电,33（5），641，（2012）
22.Light extraction improvement of packaged GaN-based LEDs with triple-patterned surface/interfaces
X. X. Fu, Z. Z. Chen, B. Zhang, X. N. Kang, X. Z. Jiang, C. L. Xu, T. J. Yu, and G. Y. Zhang*. ISSLED-2012, July, Germany (Oral), p140
23.Morphology effect of silver nanoparticles on localized surface plasmon coupling with green light-emitting diode
S. Jiang, Z. Hu, X. X. Fu, X. Z. Jiang, F. Yu, S. Y. Wang, Z. Z. Chen*, T.J.Yu, G.Y.Zhang. ISSLED-2012, July, Germany (Oral), p125
24.Fabrication on high efficiency,high reliability GaN-based vertical structure light emitting diode
陈志忠(Zhizhong Chen)，孙永健 (Yongjian Sun)，康香宁(Xiangning Kang)，于彤军(Tongjun Yu)，吴洁君(Jiejun Wu)，秦志新（Zhixin Qin），张国义(Guoyi Zha). 2012国际氮化物半导体衬底与外延芯片研讨会，广东，松山湖 （邀请报告）
25.高效率GaN基LED微纳米出光结构研究
陈志忠，付星星，俞锋，康香宁，张国义 2012;全国半导体器件技术、产业发展研讨会, p270 (优秀论文奖).
26.GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template*
Fu XingXing; Zhang Bei; Kang XiangNing; Chen Zhizhong;Zhang Guoyi. OPTICS EXPRESS, 19(19), A1104-A1108(2011)
27.GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates
Sun Yongjian; Trieu Simeon; Yu Tongjun; Chen Zhizhong; Zhang Guoyi. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 26(8), 085008(2011)
28.Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition*
Li Zheng; Jiang Yuxuan; Yu Tongjun; Chen Zhizhong; Zhang Guoyi. APPLIED SURFACE SCIENCE, 257(18), 8062-8066(2011)
29.Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers*
Tao Y. B.; Chen Z. Z*.; Yu T. J.等 JOURNAL OF CRYSTAL GROWTH, 318(1), 509-512(2011)
30.Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy
Tao Y. B.; Yu T. J.; Yang Z. Y, Chen Z.Z., Zhang G.Y. JOURNAL OF CRYSTAL GROWTH, 315(1), 183-187(2011)
31.Light transmission from the large-area highly ordered epoxy conical pillar arrays and application to GaN-based light emitting diodes*
Fu Xing-Xing; Kang Xiang-Ning; Zhang Bei JOURNAL OF MATERIALS CHEMISTRY, 21(26), 9576-9581 (2011)
32.Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate*
Yan J.; Yu T. J.; Li X. B. JOURNAL OF APPLIED PHYSICS, 110(7), 073102(2011)
33.Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy*
Du Yan-Hao; Wu Jie-Jun; Luo Wei-Ke; CHINESE PHYSICS B, 20(9), 098101(2011)
34.Size effect on efficiency droop of blue light emitting diode*
Y.B.Tao, S.Y.Wang, Z.Z.Chen*, Physica Status Solidi, C,（2011 be accepted）
35.Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN *
Junjing Deng, Zhizhong Chen*, Suyuan Wang, Feng Yu, Tongjun Yu, Guoyi Zhang Physica Status Solidi, C,（2011 be accepted）
教授课程 1、《宽禁带半导体》简介： 概括介绍宽禁带半导体的种类，发展历史和当前国际发展状况，主要物理、化学性质、制备方法，材料及器件应用前景 ；重点介绍InAIGaN材料体系能带特性、异质结构、量子阱和超晶格结构的物理性质，MOCVD生长技术，材料的表征方法 ；在发光器件，电子器件，光电器件，稀磁半导体等方面的主要物理问题和研究课题。本课程教学得到了 Crosslight软件公司(www.crosslight.com)提供 的相关仿真软件的支持。
2、《固体物理》 小班讨论课强化大课授课的重点内容，以半导体专业方向为基础，开展专业、前沿、实验应用的讨论，拓展学生的 视野，培养学生文献阅读、综述的能力，深化固体物理的教学。
3、《普通物理实验：电学》 讲授电基伏安，误差，霍尔，弗兰克-赫兹，磁滞回线，虚拟仪器，谐振等实验课程，本课程2006年为北京市精品课程。 |
