个人简历
1963年7月出生于江苏省扬州市；
1985年7月毕业于南京大学物理系半导体专业，获学士学位；
1988年7月毕业于中国科技大学物理系半导体专业，获硕士学位；
1995年3月毕业于日本东北大学材料科学研究所 (IMR)，获博士学位；
2000年晋升教授；
2003年获国家杰出青年科学基金；
2004年聘为教育部长江特聘教授
曾任日本东京大学产业技术研究所 (IIS) 客座研究员、东京大学先端科技研究中心(RCAST) 客座教授、 日本千叶大学电子学与光子学研究中心客座教授、日本产业技术综合研究所(AIST)访问教授，现为北京大学物理学院副院长、宽禁带半导体研究中心副主任。
主要研究领域：
（一）宽禁带半导体量子结构材料与器件,
（二）宽禁带半导体低维物理
主要研究内容包括： 1.III族氮化物半导体异质结构和量子阱的外延生长和缺陷控制，
2.III族氮化物半导体异质结构二维电子气经典与量子输运性质，
3.III族氮化物半导体异质结构二维电子气的自旋性质和自旋电子器件，
4.III族氮化物半导体量子阱子带跃迁(ISBT)探测器件，
5.III族氮化物半导体高温功率器件与器件物理
主要学术成就：
1995年开始从事III族氮化物（GaN基）宽禁带半导体物理、材料和器件研究，在强极化、高能带阶跃体系中二维电子气输运规律、GaN基异质结构外延生长和缺陷控制等方面取得在国内外同行中有一定影响的重要进展，近年在GaN基异质结构二维电子气自旋性质、GaN基量子阱子带跃迁器件等方面取得一系列进展。先后主持和作为核心成员参加了国家“863”计划项目、国家“973”计划项目、国家自然科学基金重大、重点项目、教育部重大研究计划项目等20多项科研课题，发表SCI收录论文140多篇，论文被引用超过1000次，先后在国际学术会议上做邀请报告近10次，获国际学术会议“最佳论文奖”1次和全国学术会议“优秀论文奖”4次，获得/申请国家发明专利11项；多次担任国际学术会议程序委员会委员和组织委员会委员，是APL、JAP等国际学术刊物的特约审稿人；获国家自然科学二等奖（2004年）、国家技术发明三等奖（1999年）、江苏省科技进步一等奖（2003年）和教育部科技进步三等奖（2000年）。
近年发表的主要论文：
1.Chunming Yin, Bo Shen, Qi Zhang et al.
Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
Applied Physics Letters, 97, 181904 (2010).
2.J. Song, F. J. Xu, X. D. Yan, B. Shen, et.al
High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1-xN/GaN heterostructures
Applied Physics Letter, 97, 232106 (2010)
3.N. Ma, B. Shen, F.J. Xu, et al.
Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers
Applied Physics Letters 96, 242104 (2010)
4.Q. Zhang, X.Q. Wang, C.M. Yin, B. Shen et al.
Strong circular photogalvanic effect in ZnO epitaxial films
Applied Physics Letters 97, 041907 (2010)
5.N. Ma, X.Q. Wang, F.J. Xu, B. Shen et al.
Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction
Applied Physics Letters 97, 222114 (2010)
6.X. Q. Wang, G.Z. Zhao, Q. Zhang, B. Shen et al.
Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities
Applied Physics Letters 96，061907 (2010)
7.N. Tang, B. Shen, K. Han, et al.
Abnormal Shubnikov-de Haas oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures in tilted magnetic fields Physical Review B 79 (7): 073304 (2009)
8. Z. L. Miao, T. J. Yu, F. J. Xu, B. Shen, et al.
The origin and evolution of V-defects in InxAl1-xN epilayers grown by Metalorganic Chemical Vapor Deposition Applied Physics Letters 95, 231909 (2009)
9. Q. Zhang, X.Q. Wang, X. W. He, B. Shen, et al.,
Lattice polarity detection of InN by circular photogalvanic effect Applied Physics Letter 95, 031902 (2009)
10. L. W. Sang, H. Fang, Z. X. Qin, B. Shen, et al.,
Transmission eletron microscopy investigation of inversion domain boundary in Al0.65Ga0.35 grown on AlN/sapphire template Applied Physics Letter 95, 112106 (2009)
11. X. W. He, B. Shen, Y. H. Chen, et al.
Anomalous Photogalvanic Effect of Circularly Polarized Light Incident on the Two- Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures at Room Temperature Physical Review Letters 101, 147402 (2008)
12. S. Huang, B. Shen, F. Lin, et al.
Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures Applied Physics Letters 93, 172102 (2008)
13. N. Tang, B. Shen, K. Han, et al.
Zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions
Applied Physics Letters 93, 172113 (2008)
14.L. W. Sang, Z. X. Qin, H. Fang, X. R. Zhou, Z. J. Yang, B. Shen, G. Y. Zhang
Study on threading dislocations blocking mechanism of AlxGa1-xN/GaN superlattices
Applied Physics Letters 92, 192112 (2008)
15.F. J. Xu, B. Shen, M. J. Wang, et al.
Mechanical properties of AlxGa1-xN films with high Al composition grown on AlN/sapphire templates
Applied Physics Letters 91, 091905 (2007)
16.X. W. He, B. Shen, Y. Q. Tang, et al.
Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under uniaxial strain
Applied Physics Letters 91, 071912 (2007)
17.Y. Q. Tang, B. Shen, X. W. He, et al.
Room temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlxGa1-xN/GaN heterostructures
Applied Physics Letters 91, 071920 (2007)
18.S. Huang, B. Shen, M. J. Wang, et al.
Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures
Applied Physics Letters 91, 072109 (2007)
19.N. Tang, B. Shen, X. W. He, et al.
Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
Physical Review B 76, 155303 (2007)
20.M. J. Wang , B. Shen, Y. Wang, et al.
Observation of inversion behaviors induced by polarization effects in GaN/AlxGa1-xN/GaN based metal-insulator-semiconductor structures
Applied Physics Letters 88, 242104 (2006)
21.N. Tang, B. Shen, M. J. Wang, et al.
Beating patterns in the oscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaN heterostructures
Applied Physics Letters 88, 172112 (2006)
22.N. Tang, B. Shen, M. J. Wang, et al.
Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures
Applied Physics Letters 88, 172115 (2006)
23.N. Tang, B. Shen, M. J. Wang, et al.
Comment on "Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures"
Physical Review B 73, 037301 (2006)
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