会议名称(中文)： 2015年第10届西班牙电子器件大会
会议名称(英文)： 2015 10th Spanish Conference on Electron Devices (CDE)
所属学科： 电子工程
开始日期： 2015-02-11
结束日期： 2015-02-13
所在国家： 西班牙
所在城市： 西班牙
具体地点： Aranjuez, Spain
主办单位： Universidad Rey Juan Carlos
会议背景介绍：
The 10th Spanish Conference on Electron Devices brings together the work of both research groups and companies on the field of electronic devices and applications. This edition will take place on February 2015, from 11th to 13th, in the so called Royal Place of Aranjuez (Madrid), carrying on with a series of previous events in Valladolid (2013), Palma de Mallorca (2011), Santiago de Compostela (2009), El Escorial (Madrid, 2007), Tarragona (2005), Calella de la Costa (Barcelona, 2003), Granada (2001), Madrid (1999) and Barcelona (1997).
征文范围及要求：
The aim of the conference is to review the advances in the field of electronic devices, according to the following topics:
HORIZONTAL TOPICS
New materials and processing technology. Manufacturing techniques for bulk materials (Czochralski, Bridgman, etc) or 2D layered materials (LPE, MBE, MOVPE…). Development of semiconductor materials: carbon-derived materials (graphene, nanotubes), new 2D related materials (chalcogenides, etc) and organic materials for devices. Technological processes and their simulation: substrate treatments, lithography and printing techniques (photolithography, e-beam, RIE, ink-jet), chemical etching, FIB, diffusion, ion implantation, metal and insulators deposition, contact/electrode technology, etc. Heterogeneous integration for photonics and energy harvesting.
Device modelling and simulation. Statistical, numerical or analytical models for electronic, optical or physical device aspects. Physical and circuital device models and their interconnection are included.
Characterization and reliability. Test and characterization techniques applied to electronic devices, both at material low-level (SIMS, XPS, photoluminescence, Hall-effect, X-ray diffractometry, different microscopies –SEMT, TEM, STM, AFM, Auger-, RBS, etc). Or at device level (quantum efficiency, I – V and impedance curves, TLM, etc). Reliability of both discrete and integrated devices, failure analysis, electromigration, accelerated degradation testing and real-time experiments.
VERTICAL TOPICS (DEVICE TYPES)
Sensors, actuators and micro/nano systems. Structures and their integration into devices for sensors, actuators and micro/nanosystems, MEMS/NEMS. It includes sensors for biological, molecular, physical or chemical detection, as well as integrated sensors.
Optoelectronic, photovoltaic devices and displays. Hybrid and organic electronics. Silicon-based, III-V- and II-VI semiconductor-based solar cells. Hybrid, organic and intermediate band solar cells. Other photovoltaic devices (thermophotovoltaic), monochromatic-light converters. Optoelectronic devices: LEDs, OLEDs, OLETs, OFETs, lasers, modulators, as well as photonic-crystal structures. In the field of displays, it includes CCDs, TFT matrix and LCDs.
New device concepts: quantum devices, nano-devices, RF, microwave and power devices. Design and manufacturing of new functional devices based in nanostructures (nanotubes, nanowires or quantum dots). Devices for bioelectronics applications. Magnetic, nano-photonic, spintronic, and molecular devices. Devices for micro-energy harvesting. Terahertz operating devices. Discrete and integrated devices for high power/voltage/current operation. It includes FETs, HBTs for high power, RF, microwave and integrated switches, capacitors, inductors, and components for batteries. |
