会议名称(中文)： 15th International Workshop on Junction Technology
会议名称(英文)： 15th International Workshop on Junction Technology
所属学科： 等离子体物理,电子工程,半导体技术
开始日期： 2015-06-11
结束日期： 2015-06-12
所在国家： 日本
所在城市： 日本
具体地点： Kyoto, Japan
主办单位： Japan Society of Applied Physics
[ 重要日期 ]
全文截稿日期： 2015-05-07
会议背景介绍：
The 15th International Workshop on Junction Technology (IWJT2015) will be held on June 11 - 12, 2015 in Kyoto, Japan. IWJT, started in 2000 and has been held annually in Japan or China, is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors. In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists.
征文范围及要求：
Scope of Workshop
(Papers are solicited in, but not limited to the following)
Doping Technology --- Ion implantation, plasma doping, gas and solid doping
Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, new activation annealing, lattice damage and defects
Junction Technology for Devices --- CMOS devices, Power devices, Image sensors, Solar cells, etc.
Silicide and Contact Technology --- Silicide materials and salicide technology, embedded and elevated S/D, low barrier contact, surface pre-treatment
Characterization for Shallow Junction --- Physical and electrical characterization of junctions for 2D and 3D structures
Modeling and Simulation --- Modeling and simulation of shallow junction formation of CMOS
Advanced Equipment, Materials and Substrates for Junction Technologies |
