会议名称(中文)： 第六届国际III族氮化物生长研讨会
会议名称(英文)： 6th International Symposium on Growth of III-Nitrides
所属学科： 光学,材料科学基础学科,纳米科学与技术
开始日期： 2015-11-08
结束日期： 2015-11-12
所在国家： 日本
所在城市： 日本
具体地点： Hamamatsu, Japan
主办单位： The Japan Society of Applied Physics
[ 重要日期 ]
全文截稿日期： 2015-06-12
会议背景介绍：
The 6th International Symposium on Growth of III-Nitrides (ISGN-6) will be held on November 8-13, 2015, in Hamamatsu, Japan. This symposium follows the 1st symposium held in Linköping, Sweden; the 2nd in Izu, Japan; the 3rd in Montpellier, France; the 4th in St. Petersburg, Russia; and the 5th in Atlanta, USA.
This symposium is devoted to the exposition of recent progress and outlining future directions in the field of bulk substrates and the thin-film growth of III-nitrides, as well as the growth and fabrication of nanostructures. The aim of ISGN-6 is to cover the development of all relevant growth techniques for III-nitrides.
征文范围及要求：
Subjects
Growth
Bulk growth techniques for III-nitrides
Epitaxial growth techniques for III-nitrides
Growth of nitride nanostructures
Growth of nitrides on patterned/foreign substrates
Characterization:
Structural characterization of nitrides
Optical/electrical characterization of nitrides
Processing:
Processing of nitride crystals
Contact materials and structures
Light extraction
Device application:
Electron device applications of nitride crystals
Optical device applications of nitride crystals |
